The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Apr. 20, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Hung Cheng, Hsinchu, TW;
Yong-En Syu, Hsinchu, TW;
Kuo-Hwa Tzeng, Hsinchu, TW;
Ke-Dian Wu, Hsinchu, TW;
Cheng-Ta Wu, Hsinchu, TW;
Yeur-Luen Tu, Hsinchu, TW;
Ming-Che Yang, Hsinchu, TW;
Wei-Kung Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a supporting substrate. The semiconductor device structure also includes a first carrier-trapping layer covering the supporting substrate. The first carrier-trapping layer is doped with a group-IV dopant. The semiconductor device structure further includes an insulating layer covering the first carrier-trapping layer. In addition, the semiconductor device structure includes a semiconductor substrate over the insulating layer. The semiconductor device structure also includes a transistor. The transistor includes a gate stack over the semiconductor substrate and source and drain structures in the semiconductor substrate.