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For the Inventor, By the Inventor

Kanagawa, Japan

Ulrich Egger

This inventor holds 16 USPTO granted patents, primarily in Ferroelectric Devices. Top assignees: Infineon Technologies Ag, Kabushiki Kaisha Toshiba, Infineon Ag. Active years: 2004-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ulrich Egger. Retrieved from https://idiyas.com/inventor/ulrich-egger

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16

% Patents Active = 6.3

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 40(Granted Patents)


Location History:

  • Yokohama, JP (2004)
  • Kanagawa, JP (2005)
  • Tokyo, JP (2006)
  • Kanagawa-ken, JP (2004 - 2008)
  • Dresden, DE (2009)

Company Filing History:

goldMedal14 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal5 out of 53,286 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal1 out of 13 
 
Infineon Ag
 patents
4. 1 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 2004-2009

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Areas of Expertise:
Ferroelectric Capacitors
FeRAM Devices
Etching Methods
Hydrogen Damage
Hardmask Technology
Oxygen Diffusion
Noble Metal
Fabrication Process
Patterning Techniques
Capacitor Manufacturing
Selectivity
Reactive Ion Etch
16 patents (USPTO):Explore Patents
1. 7504680 - Semiconductor device and mask pattern (2009-03-17),
2. 7316980 - Method for forming ferrocapacitors and FeRAM devices (2008-01-08),
3. 7098142 - Method of etching ferroelectric devices (2006-08-29),
4. 7071506 - Device for inhibiting hydrogen damage in ferroelectric capacitor devices (2006-07-04),
5. 7045837 - Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing (2006-05-16),
6. 7042705 - Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing (2006-05-09),
7. 7015049 - Fence-free etching of iridium barrier having a steep taper angle (2006-03-21),
8. 7001781 - Method for producing a ferroelectric capacitor that includes etching with hardmasks (2006-02-21),
9. 7001780 - Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method (2006-02-21),
10. 6924156 - Method for forming a ferroelectric capacitor device (2005-08-02),
11. 6897501 - Avoiding shorting in capacitors (2005-05-24),
12. 6867053 - Fabrication of a FeRAM capacitor using a noble metal hardmask (2005-03-15),
13. 6785119 - Ferroelectric capacitor and process for its manufacture (2004-08-31),
14. 6762064 - Process for fabrication of a ferrocapacitor (2004-07-13),
15. 6746877 - Encapsulation of ferroelectric capacitors (2004-06-08),

Title: The Innovative Contributions of Ulrich Egger

Introduction

Ulrich Egger, an esteemed inventor based in Kanagawa-ken, Japan, has made significant strides in the field of semiconductor technology. With a remarkable record of 16 patents, Egger has established himself as a key player in innovation, pushing forward advancements within the industry.

Latest Patents

Among his notable contributions are two groundbreaking patents. The first patent details a semiconductor device that encompasses a semiconductor substrate and a uniquely configured capacitor. This capacitor features a dielectric film that is sandwiched between a lower electrode and an upper electrode, utilizing an ABOperovskite-type oxide made from elements such as lead (Pb), barium (Ba), and strontium (Sr) as A-site elements, alongside zirconium (Zr), titanium (Ti), tantalum (Ta), niobium (Nb), magnesium (Mg), tungsten (W), iron (Fe), and cobalt (Co) as B-site elements. The precision of the design is accounted for with a radius of curvature of the capacitor’s sidewall being 250 nm or less.

The second patent focuses on a method for forming ferrocapacitors and FeRAM (Ferroelectric Random Access Memory) devices. This innovative method includes a vertical structure where a ferroelectric layer is deposited over an insulating layer. Through a carefully orchestrated etching process, electrodes are formed without compromising the integrity of the insulating layer, which enhances the device's functionality and performance.

Career Highlights

Ulrich Egger has amassed valuable experience while working for prominent companies such as Infineon Technologies AG and Kabushiki Kaisha Toshiba. His tenure at these organizations has allowed him to apply his innovative insights and strengthen his expertise in semiconductor technologies.

Collaborations

Throughout his career, Egger has collaborated with fellow experts, including Haoren Zhuang and Karl Hornik. These partnerships have played a crucial role in advancing their collective research and development efforts, contributing to the success of numerous projects.

Conclusion

Ulrich Egger stands as a distinguished inventor whose contributions significantly impact semiconductor technology. His 16 patents showcase his inventive spirit and commitment to pushing the boundaries of innovation. The advances he has made, particularly with his latest patents, highlight the profound effects of combining creativity with technical expertise in the realm of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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