The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Feb. 26, 2003
Ulrich Egger, Kanagawa-ken, JP;
Haoren Zhuang, Tokyo-to, JP;
Rainer Bruchhaus, Kanagawa-ken, JP;
Infineon Technologies AG, Munich, DE;
Abstract
A method of etching a ferroelectric devicehaving a ferroelectric layerbetween a top and a bottom electrodeis disclosed herein. Hardmasksare deposited on the top electrode, two or more hardmasks being spaced apart by narrow first regionsand spaced apart from other hardmasks by wider second regions. The top electrodeand ferroelectric layerare then etched to pattern the top electrodethus forming capacitors, and the bottom electrodeis etched by a process in which the second regions are etched more slowly than the second regions. Those capacitors having a first region between them have a common bottom electrode, but in the second regions the bottom electrode is severed. To pattern the bottom electrode, a fluorine-based chemistry followed thereafter by a CO-based chemistry are used in a two step etching process.