The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Sep. 03, 2003
Ulrich Egger, Kanagawa-ken, JP;
Haoren Zhuang, Tokyo-to, JP;
George Stojakovic, Munich, DE;
Kazuhiro Tomioka, Kanagawa-ken, JP;
Ulrich Egger, Kanagawa-ken, JP;
Haoren Zhuang, Tokyo-to, JP;
George Stojakovic, Munich, DE;
Kazuhiro Tomioka, Kanagawa-ken, JP;
Infineon Technologies AG, , DE;
Kabushiki Kaisha Toshiba, , JP;
Abstract
An Iridium barrier layer is between a contact plug and a bottom electrode of a capacitor. Etching is performed to pattern the bottom electrode and barrier layer using a fluorine-based recipe resulting in the formation of a first fence clinging to the sidewalls. Next the remaining barrier layer is etched using a CO-based recipe. A second fence is formed clinging to and structurally supported by the first fence. At the same time, the CO-based recipe etches away a substantial portion of the first fence to remove the structural support provided to the second fence. The second fence is therefore lifted-off from the sidewalls leaving the sidewalls substantially free of clinging fences. The etched barrier layer has a sidewall transition. The sidewalls have a relatively low taper angle above the sidewall transition and a relatively steep taper angle below the sidewall transition.