The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Jan. 07, 2003
Applicant:
Inventors:
Assignee:
Infineon AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
Abstract
A ferroelectric capacitor encapsulation method for preventing hydrogen damage to electrodes and ferroelectric material of the capacitor. In general terms, the method for encapsulating a capacitor includes etching a bottom electrode of a capacitor to expose an underlying wafer surface. An undercut is etched between the capacitor and the wafer surface. The undercut is refilled with a barrier layer to reduce the diffusion of hydrogen from the surface of the wafer into the capacitor.