The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Oct. 02, 2003
Haoren Zhuang, New York, NY (US);
Ulrich Egger, Kanagawa-ken, JP;
Rainer Bruchhaus, Munich, DE;
Karl Hornik, Kanagawa-ken, JP;
Jenny Lian, New York, NY (US);
Stefan Gernhardt, Kanagawa-ken, JP;
Haoren Zhuang, New York, NY (US);
Ulrich Egger, Kanagawa-ken, JP;
Rainer Bruchhaus, Munich, DE;
Karl Hornik, Kanagawa-ken, JP;
Jenny Lian, New York, NY (US);
Stefan Gernhardt, Kanagawa-ken, JP;
Infineon Technologies AG, Munich, DE;
Abstract
Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the AlOlayer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.