Company Filing History:

8 out of 14,724

Infineon Technologies Ag

Kabushiki Kaisha Toshiba

patents

where one patent can have more than one assignee

Years Active: 2004-2008

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7378700 - Self-aligned V0-contact for cell size reduction (2008-05-27),

2. 7316980 - Method for forming ferrocapacitors and FeRAM devices (2008-01-08),

3. 7101785 - Formation of a contact in a device, and the device including the contact (2006-09-05),

4. 7061035 - Self-aligned V0-contact for cell size reduction (2006-06-13),

5. 7001780 - Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method (2006-02-21),

6. 6946735 - Side-wall barrier structure and method of fabrication (2005-09-20),

7. 6940111 - Radiation protection in integrated circuits (2005-09-06),

8. 6839220 - Multi-layer barrier allowing recovery anneal for ferroelectric capacitors (2005-01-04),

9. 6815234 - Reducing stress in integrated circuits (2004-11-09),

Title: The Innovative Mind of Stefan Gernhardt

Introduction: Stefan Gernhardt, based in Kanagawa-ken, Japan, is a prolific inventor with nine patents to his name. His contributions to the field of ferroelectric memory devices highlight his commitment to advancing technology and improving memory efficiency.

Latest Patents: Among his latest inventions, Gernhardt has developed a self-aligned V0-contact for cell size reduction in FeRAM (Ferroelectric Random-Access Memory) devices. This innovation features a ferroelectric material sandwiched between top and bottom electrodes, utilizing a V0-contact for electrical connection with an underlying CS-contact. By aligning the V0-contact with the bottom electrode, his design maximizes space efficiency. Additionally, Gernhardt's method for forming ferrocapacitors and FeRAM devices involves a detailed etching process that creates vertical structures while ensuring connections to conductive elements beneath the insulating layer.

Career Highlights: Gernhardt has an extensive professional background, having contributed to reputable organizations such as Infineon Technologies AG and Infineon AG. His work in these companies has focused on developing cutting-edge technologies in the field of memory solutions, markedly impacting the evolution of ferroelectric devices.

Collaborations: Throughout his career, Stefan Gernhardt has collaborated with notable colleagues, including Rainer Bruchhaus and Uwe Wellhausen. These partnerships have fostered a collaborative environment that promotes innovation and the advancement of technology across various projects.

Conclusion: Stefan Gernhardt stands out as an influential inventor whose work continues to shape the landscape of memory technology. His latest patents reflect a deep understanding of ferroelectric materials and innovative manufacturing processes, paving the way for future advancements in the field.

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