The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Jul. 18, 2003
Andreas Hilliger, Kanagawa-ken, JP;
Jingyu Lian, Tokyo-to, JP;
Nicolas Nagel, Dresden, DE;
Rainer Bruchhaus, Kanagawa-ken, JP;
Stefan Gernhardt, Kanagawa-ken, JP;
Uwe Wellhausen, Dresden, DE;
Bum-ki Moon, Hopewell Junction, NY (US);
Karl Hornik, Kanagawa-ken, JP;
Andreas Hilliger, Kanagawa-ken, JP;
Jingyu Lian, Tokyo-to, JP;
Nicolas Nagel, Dresden, DE;
Rainer Bruchhaus, Kanagawa-ken, JP;
Stefan Gernhardt, Kanagawa-ken, JP;
Uwe Wellhausen, Dresden, DE;
Bum-Ki Moon, Hopewell Junction, NY (US);
Karl Hornik, Kanagawa-ken, JP;
Infineon Technologies AG, Munich, DE;
Abstract
A multi-layer barrier for a ferroelectric capacitor includes an outdiffusion barrier layer permeable to both hydrogen and oxygen. The outdiffusion barrier layer covers the ferroelectric of the capacitor. Oxygen passes through the outdiffusion barrier layer into the ferroelectric during an oxygen anneal in order to repair damage to the ferroelectric caused during etching. The outdiffusion barrier layer reduces the decomposition of the ferroelectric by blocking molecules leaving the ferroelectric during the oxygen anneal. The multi-layer barrier also includes a hydrogen barrier layer deposited on the outdiffusion barrier layer after repair of the ferroelectric by the oxygen anneal. The hydrogen barrier layer allows the multi-layer barrier to block the passage of hydrogen into the ferroelectric during back-end processes.