Company Filing History:

16 out of 14,705

Infineon Technologies Ag

patents

5 out of 52,711

Kabushiki Kaisha Toshiba

4. 4 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2003-2008

where 'Filed Patents' based on already Granted Patents

21 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 7378700 - Self-aligned V0-contact for cell size reduction (2008-05-27),

2. 7101785 - Formation of a contact in a device, and the device including the contact (2006-09-05),

3. 7084027 - Method for producing an integrated circuit (2006-08-01),

4. 7071506 - Device for inhibiting hydrogen damage in ferroelectric capacitor devices (2006-07-04),

5. 7061035 - Self-aligned V0-contact for cell size reduction (2006-06-13),

6. 7042705 - Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing (2006-05-09),

7. 7042037 - Semiconductor device (2006-05-09),

8. 7009230 - Barrier stack with improved barrier properties (2006-03-07),

9. 7002196 - Ferroelectric capacitor devices and FeRAM devices (2006-02-21),

10. 6946735 - Side-wall barrier structure and method of fabrication (2005-09-20),

11. 6906908 - Semiconductor device and method of manufacturing the same (2005-06-14),

12. 6858442 - Ferroelectric memory integrated circuit with improved reliability (2005-02-22),

13. 6855565 - Semiconductor device having ferroelectric film and manufacturing method thereof (2005-02-15),

14. 6839220 - Multi-layer barrier allowing recovery anneal for ferroelectric capacitors (2005-01-04),

15. 6800890 - Memory architecture with series grouped by cells (2004-10-05),

Title: The Innovative Contributions of Andreas Hilliger in Semiconductor Technology

Introduction: Andreas Hilliger, hailing from Kanagawa-ken, Japan, is a distinguished inventor with an impressive portfolio of 21 patents. His work primarily focuses on advancements in ferroelectric memory technology, which has significant implications for semiconductor devices. Hilliger's innovative patents reflect his dedication to improving efficiency and functionality in electrical engineering.

Latest Patents: Among Hilliger's latest contributions to the field are two pivotal patents. The first, titled "Self-aligned V0-contact for cell size reduction," introduces an innovative design for a ferroelectric random-access memory (FeRAM). This invention includes a ferroelectric material sandwiched between a top and a bottom electrode, utilizing a V0-contact for electrical connections. The alignment is achieved using the bottom electrode, and a liner layer aids in the etching process to form the contact.

The second patent, "Formation of a contact in a device, and the device including the contact," details a method of creating a contact to an underlayer within a semiconductor device. This process includes forming a contact hole, a protective barrier layer, and filling the hole with a conductive material, all designed to inhibit lateral diffusion of gases like hydrogen and oxygen, enhancing device durability.

Career Highlights: Hilliger has a remarkable career, with roles at notable companies, including Infineon Technologies AG and Toshiba Corporation. His contributions to these organizations have helped pave the way for modern advancements in semiconductor technology, showcasing his expertise in the field.

Collaborations: Throughout his career, Hilliger has collaborated with esteemed colleagues such as Nicolas Nagel and Uwe Wellhausen. Their partnership has further strengthened the impact of his innovations, leading to groundbreaking advancements in memory technologies and semiconductor devices.

Conclusion: Andreas Hilliger's innovative work in the semiconductor industry has not only garnered him numerous patents but has also significantly influenced the future of electronics technology. His dedication to improving ferroelectric memory solutions stands as a testament to his status as a leading inventor in this crucial field of engineering.

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