The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Jul. 22, 2003
Andreas Hilliger, Kanagawa-ken, JP;
Stefan Gernhardt, Kanagawa-ken, JP;
Uwe Wellhausen, Dresden, DE;
Karl Hornik, Kanagawa-ken, JP;
Andreas Hilliger, Kanagawa-ken, JP;
Stefan Gernhardt, Kanagawa-ken, JP;
Uwe Wellhausen, Dresden, DE;
Karl Hornik, Kanagawa-ken, JP;
Infineon Technologies AG, Munich, DE;
Abstract
A method of forming a contact to an underlayer of a device includes the steps of forming a contact hole, forming a contact hole barrier layer of a barrier material in the contact hole of the device, etching the contact hole barrier layer on the bottom surface of the contact hole, depositing a liner material in the contact hole, and filling the contact hole with a conductive material. A device such as a semiconductor, passive device, capacitor or FeRAM is formed in accordance with the method. The portions of the contact hole barrier layer on the side walls of the contact hole inhibit lateral diffusion of hydrogen and/or oxygen. The contact hole barrier layer can be performed after a wet etch process to fill voids in an existing barrier layer caused by that process, or prior to the wet etch process to prevent damage to the existing barrier layer.