The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Sep. 18, 2001
Andreas Hilliger, Dresden, DE;
Ralf Staub, Dresden, DE;
Eike Lüken, Holzkirchen, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substrate () with a contacting circuit area (SS); providing an insulating layer (IS) on the surface of the semi-conductor substrate (): providing a contact hole (KL) in the insulating layer (IS) for making contacting the circuit area (SS); providing an insulating spacer area (') in at least the area above the contact hole (KL); providing at least three trenches (BG; BG; BG), the first (BG) of which is arranged next to the contact hole (KL), a second (BG) is disposed across the contact hole (KL) and a third (BG) is next to the contact hole (KL). The spacer area (′) is placed between the first and the second trench (BG; BG) and the second and the third trench (BG; BG); filling the trenches (BG; BG; BG) with a conductive material; and chemical-mechanical polishing of conductive material for producing three separated trenches (BL; BL; BL).