The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Nov. 12, 2004
Hiroshi Itokawa, Yokohama, JP;
Koji Yamakawa, Tokyo, JP;
Tohru Ozaki, Tokyo, JP;
Yoshinori Kumura, Yokohama, JP;
Takamichi Tsuchiya, Yokohama, JP;
Nicolas Nagel, Dresden, DE;
Bum-ki Moon, Poughkeepsie, NY (US);
Andreas Hilliger, Taipei-shi, TW;
Hiroshi Itokawa, Yokohama, JP;
Koji Yamakawa, Tokyo, JP;
Tohru Ozaki, Tokyo, JP;
Yoshinori Kumura, Yokohama, JP;
Takamichi Tsuchiya, Yokohama, JP;
Nicolas Nagel, Dresden, DE;
Bum-Ki Moon, Poughkeepsie, NY (US);
Andreas Hilliger, Taipei-shi, TW;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Infineon Technologies AG, Munich, DE;
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.