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Tohru Ozaki

USPTO Granted Patents = 51 (Patent Applications = 10)

Average Co-Inventor Count = 2.0

ph-index = 13

Forward Citations = 707(Granted Patents)

Forward Citations (Not Self Cited) = 695(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Suginami, JP (1994)
Kanagawa, JP (1994)
Minato-ku, JP (2006)
Tokyo, JP (1992 - 2013)
Shinagawa-ku, JP (2004 - 2013)

Company Filing History:

48 out of 52,735

Kabushiki Kaisha Toshiba

Matsushita Graphic Communication Systems, Inc.

1 out of 14,724

Infineon Technologies Ag

where one patent can have more than one assignee

Years Active: 1992-2013

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Areas of Expertise:

Nonvolatile Semiconductor Memory

Ferroelectric Capacitor

Semiconductor Device

Dynamic Random Access Memory

Trench-Type Capacitor

Self-Aligned Contact Structure

Image Data Encoding

Transistor Technology

Semiconductor Manufacturing Process

Cylindrical Capacitors

Higher Density Memory

Memory Device Fabrication

51 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8476693 - Nonvolatile semiconductor memory and method for manufacturing the same (2013-07-02),

2. 8362533 - Semiconductor device including a transistor and a ferroelectric capacitor (2013-01-29),

3. 8283791 - Semiconductor device and method for manufacturing same (2012-10-09),

4. 7821047 - Semiconductor apparatus and method for manufacturing the same (2010-10-26),

5. 7816717 - Semiconductor memory device (2010-10-19),

6. 7812384 - Semiconductor device including a transistor and a ferroelectric capacitor (2010-10-12),

7. 7763920 - Semiconductor memory having ferroelectric capacitor (2010-07-27),

8. 7612398 - Semiconductor storage device and method of manufacturing the same (2009-11-03),

9. 7573084 - Non-volatile semiconductor memory device and method for fabricating the same (2009-08-11),

10. 7417274 - Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same (2008-08-26),

11. 7400005 - Semiconductor memory device having ferroelectric capacitors with hydrogen barriers (2008-07-15),

12. 7348617 - Semiconductor device (2008-03-25),

13. 7312488 - Semiconductor storage device and manufacturing method for the same (2007-12-25),

14. 7214982 - Semiconductor memory device and method of manufacturing the same (2007-05-08),

15. 7095068 - Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same (2006-08-22),

Title: The Innovative Mind of Tohru Ozaki

Introduction: Tohru Ozaki is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tohru Ozaki holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Tohru Ozaki has worked with leading tech companies in Japan, spearheading projects that have revolutionized the industry. His dedication to pushing the boundaries of what is possible has earned him a reputation as a visionary inventor.

Collaborations: Throughout his career, Tohru Ozaki has collaborated with top researchers, engineers, and scientists both in Japan and internationally. These collaborations have led to the development of cutting-edge technologies that have had a lasting impact on the world.

Conclusion: Tohru Ozaki's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of invention. His work continues to inspire future generations of inventors to think boldly and push the limits of what is achievable.

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