The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
May. 23, 2005
Tohru Ozaki, Tokyo, JP;
Iwao Kunishima, Yokohama, JP;
Tohru Ozaki, Tokyo, JP;
Iwao Kunishima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is provided a semiconductor storage device comprising a ferroelectric capacitor superior in barrier capability against penetration of hydrogen from all directions including a transverse direction. The device comprises a transistor formed on a semiconductor substrate, the ferroelectric capacitor formed above the transistor and including a lower electrode, a ferroelectric film, and an upper electrode, a first hydrogen barrier film which continuously surrounds side portions of a ferroelectric capacitor cell array constituted of a plurality of ferroelectric capacitors, and a second hydrogen barrier film which is formed above the ferroelectric capacitor cell array and which is brought into contact with the first hydrogen barrier film in the whole periphery.