The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Jun. 06, 2003
Yoshinori Kumura, Yokohama, JP;
Iwao Kunishima, Yokohama, JP;
Tohru Ozaki, Tokyo, JP;
Hiroyuki Kanaya, Yokohama, JP;
Shinichi Watanabe, Yokohama, JP;
Yoshinori Kumura, Yokohama, JP;
Iwao Kunishima, Yokohama, JP;
Tohru Ozaki, Tokyo, JP;
Hiroyuki Kanaya, Yokohama, JP;
Shinichi Watanabe, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.