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For the Inventor, By the Inventor

Yokohama, Japan

Hiroshi Itokawa

This inventor holds 31 USPTO granted patents and 12 published patent applications, primarily in Semiconductor Technology. Top assignees: Kabushiki Kaisha Toshiba, Infineon Technologies Ag, Toshiba Memory Corporation. Active years: 2005-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Itokawa. Retrieved from https://idiyas.com/inventor/hiroshi-itokawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 41.9

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 51(Granted Patents)


Location History:

  • Tokyo, JP (2005)
  • Kanagawa-ken, JP (2006 - 2008)
  • Yokohama, JP (2005 - 2011)
  • Kanagawa, JP (2011 - 2013)
  • Malta, NY (US) (2014)
  • Oita-ken, JP (2015)
  • Yokkaichi, JP (2018)
  • Kuwana Mie, JP (2020)
  • Oita, JP (2016 - 2022)
  • Kuwana, JP (2016 - 2023)

Company Filing History:

goldMedal23 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal6 out of 15,027 
 
Infineon Technologies Ag
 patents
bronzeMedal4 out of 2,955 
 
Toshiba Memory Corporation
 patents
4. 3 out of 3,189 
 
Kioxia Corporation
 patents
5. 2 out of 166,351 
 
International Business Machines Corporation
 patents
where one patent can have more than one assignee

Years Active: 2005-2025

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Areas of Expertise:
Semiconductor Storage Device
Semiconductor Memory Device
FinFET
Fabrication Method
SiGe Regions
Perovskite Capacitor
Ferroelectric Capacitor
Ion Implanter
Heat Treatment
Bulk Fin Field Effect Transistor
Thin Film
31 patents (USPTO):Explore Patents
1. 12302565 - Semiconductor storage device (2025-05-13),
2. 11581329 - Semiconductor memory device (2023-02-14),
3. 11257832 - Semiconductor memory device and method for manufacturing same (2022-02-22),
4. 11183507 - Semiconductor memory device and method for manufacturing same (2021-11-23),
5. 10636807 - Semiconductor memory device and method of fabricating the same (2020-04-28),
6. 10566280 - Semiconductor device and method of manufacturing the same (2020-02-18),
7. 9972635 - Semiconductor memory device and method for manufacturing same (2018-05-15),
8. 9613974 - Semiconductor device and method for manufacturing the same (2017-04-04),
9. 9484262 - Stressed channel bulk fin field effect transistor (2016-11-01),
10. 9263319 - Semiconductor memory device and method for manufacturing the same (2016-02-16),
11. 9246005 - Stressed channel bulk fin field effect transistor (2016-01-26),
12. 9018061 - Semiconductor memory device and method for manufacturing the same (2015-04-28),
13. 8729607 - Needle-shaped profile finFET device (2014-05-20),
14. 8551871 - Method of fabricating semiconductor device (2013-10-08),
15. 8043945 - Method of fabricating semiconductor device (2011-10-25),

Title: Hiroshi Itokawa: Pioneering Inventor from Yokohama

Introduction: Hiroshi Itokawa is a renowned inventor hailing from Yokohama, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Itokawa's latest patents focus on advancements in robotics and artificial intelligence, showcasing his commitment to pushing the boundaries of technological progress.

Career Highlights: With a career spanning over three decades, Itokawa has worked with leading tech companies in Japan, spearheading projects that have revolutionized the industry. His innovative spirit and dedication to excellence have earned him numerous accolades.

Collaborations: Itokawa has collaborated with top research institutions and universities worldwide, fostering a culture of innovation and knowledge-sharing. His partnerships have led to the development of cutting-edge technologies that have had a lasting impact on society.

Conclusion: Hiroshi Itokawa's passion for innovation and relentless pursuit of excellence have solidified his reputation as a trailblazer in the world of technology. His work continues to inspire the next generation of inventors and shape the future of technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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