The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Mar. 01, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Takashi Fukushima, Mie, JP;

Yuji Sakai, Mie, JP;

Hiroshi Itokawa, Mie, JP;

Tatsunori Isogai, Mie, JP;

Ryosuke Sawabe, Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02);
Abstract

A semiconductor storage device includes: a plurality of conductive layers arranged in a first direction; a semiconductor layer extending in the first direction and facing the plurality of conductive layers; a charge storage layer provided between the plurality of conductive layers and the semiconductor layer; a first structure disposed apart from the semiconductor layer in a second direction intersecting the first direction, extending in a third direction intersecting the first direction and the second direction, and facing the plurality of conductive layers; and a plurality of first nitride films containing nitrogen (N), and covering surfaces of the plurality of conductive layers facing the first structure.


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