Yokkaichi Mie, Japan

Tatsunori Isogai

USPTO Granted Patents = 17 

Average Co-Inventor Count = 2.4

ph-index = 3

Forward Citations = 40(Granted Patents)


Location History:

  • Yokohama, JP (2015)
  • Mie, JP (2016 - 2023)
  • Yokkaichi, JP (2018 - 2024)
  • Yokkaichi Mie, JP (2021 - 2024)

Company Filing History:


Years Active: 2015-2025

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):

Title: Innovations of Tatsunori Isogai

Introduction

Tatsunori Isogai is a prominent inventor based in Yokkaichi, Mie, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work has been instrumental in advancing the reliability and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is for a semiconductor storage device. This device includes a plurality of conductive layers arranged in a first direction, a semiconductor layer extending in the same direction, and a charge storage layer positioned between the conductive layers and the semiconductor layer. Another notable patent is for a semiconductor memory device with increased reliability. This device features a stacked body with insulating and conductive layers, along with multiple insulating films designed to enhance performance and reliability.

Career Highlights

Tatsunori Isogai has worked with leading companies in the semiconductor industry, including Kioxia Corporation and Toshiba Memory Corporation. His experience in these organizations has allowed him to develop innovative solutions that address the challenges faced in semiconductor technology.

Collaborations

He has collaborated with notable colleagues such as Masaki Noguchi and Tomonori Aoyama. Their combined expertise has contributed to the successful development of advanced semiconductor technologies.

Conclusion

Tatsunori Isogai's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of reliable and efficient semiconductor devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…