The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Aug. 26, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Masaki Noguchi, Yokkaichi Mie, JP;
Tatsunori Isogai, Yokkaichi Mie, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02238 (2013.01); H01L 21/76205 (2013.01);
Abstract
According to one or more embodiments, a method for manufacturing a semiconductor device comprises forming a stacked film that comprises alternating first insulating layers and second insulating layers. A first insulating film, an electric charge storage layer, a second insulating film, and a first semiconductor layer are then formed in a hole in the stacked film. The method further includes forming a first recess in the stacked film, then supplying a first gas and a deuterium gas to the first recess. The first gas comprises hydrogen and oxygen.