The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Aug. 07, 2018
Toshiba Memory Corporation, Minato-ku, JP;
Kazuhiro Matsuo, Kuwana, JP;
Akiko Sekihara, Yokkaichi, JP;
Akira Takashima, Kuwana, JP;
Tomonori Aoyama, Yokkaichi, JP;
Tatsunori Isogai, Yokkaichi, JP;
Masaki Noguchi, Yokkaichi, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.