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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10153262 B1

PDFFull Text
Date of Patent:
Dec. 11, 2018

Filed:

Sep. 08, 2017

Semiconductor device and manufacturing method thereof

Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Tatsunori Isogai, Yokkaichi, JP;

Masaki Noguchi, Yokkaichi, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Victor A Mandala

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/11521 (2017.01); H01L 27/11526 (2017.01); H01L 27/11582 (2017.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/0203 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to an embodiment, a semiconductor device includes: a stacked body in which insulator layers and conductor layers alternately stacked; a block insulator film on a surface of the insulator layer and a surface of the conductor layer; a charge storage capacitor film on a surface of the block insulator film; a tunnel insulator film including a first insulator film on a surface of the charge storage capacitor film, a second insulator film on a surface of the first insulator film, and a third insulator film on a surface of the second insulator film; and a channel film on a surface of the third insulator film. A defect termination element is included in at least the first or the third insulator film, and defect termination element content concentrations of the first, the second, and the third insulator film are different from one another.

Find Patent Forward Citations

Isogai, Tatsunori. (2018). Semiconductor device and manufacturing method thereof (U.S. Patent No. 10153262). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10153262

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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