Kioxia Corporation

Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Tatsunori Isogai

Masaki Noguchi

Tomonori Aoyama

Akira Takashima

Shunsuke Okada

Takashi Fukushima

Kiyotaka Miyano

Kazuhiro Matsuo

Hiroshi Itokawa

Tatsufumi Hamada

Shinichi Sotome

Ryosuke Sawabe

Wakana Kai

Akiko Sekihara

Yuji Sakai

A semiconductor storage device includes: a plurality of conductive layers arranged in a first direction; a semiconductor layer extending in the first direction and facing the plurality of conductive layers; a charge storage layer provided between the plurality of conductive layers and the semiconductor layer; a first structure disposed apart from the semiconductor layer in a second direction intersecting the first direction, extending in a third direction intersecting the first direction and the second direction, and facing the plurality of conductive layers; and a plurality of first nitride films containing nitrogen (N), and covering surfaces of the plurality of conductive layers facing the first structure.

Semiconductor storage device

A semiconductor device includes: a stacked body with insulating layers and conductive layers alternately stacked along a first direction; a semiconductor layer disposed along the first direction in the stacked body; a first insulating film disposed along the first direction between the stacked body and the semiconductor layer; a second insulating film disposed along the first direction between the stacked body and the first insulating layer; a third insulating film disposed along the first direction between the stacked body and the second insulating film; and a fourth insulating film having a first portion and a second portion, the first portion being disposed between the conductive layers and the third insulating film, and the second portion being disposed along a second direction that intersects the first direction between the conductive layer and the insulating layer and being connected to the first portion, and average concentrations of deuterium in the first portion of the fourth insulating film, the third insulating film, the second insulating film, and the first insulating film are lower in an order of the second insulating film>the first insulating film>the first portion>the third insulating film.

Semiconductor memory device with increased reliability and method for manufacturing the same

A semiconductor storage device of an embodiment includes: a laminated body including electrode layers and insulating layers alternately stacked in a first direction; a semiconductor layer disposed in the laminated body; a first insulating film disposed between the laminated body and the semiconductor layer; a charge storage film disposed between the laminated body and the first insulating film, thicknesses of the charge storage film in a second direction crossing the first direction in the regions corresponding to the electrode layers being different from that in the regions corresponding to the insulating layers, the charge storage film comprising: a second insulating film disposed between the laminated body and the first insulating film, and a third insulating film disposed between the second insulating film and the regions corresponding to the electrode layers, the third insulating film having a density different from that of the second insulating film.

Semiconductor storage device and method for manufacturing the same

A semiconductor storage device relating to one embodiment includes: a stacked body in which electrode films and insulating films are alternately stacked in a first direction; a first and a second charge storage films that are arranged away from each other in the first direction inside the stacked body and each face one of the electrode films; and a tunnel insulating film that extends in the first direction inside the stacked body and is in contact with the first and the second charge storage films. The first and the second charge storage films each include a first film that is in contact with the electrode film and contains a High-k material, and a second film that is provided between the first film and the tunnel insulating film and contains silicon nitride.

A semiconductor device according to an embodiment includes a stacked body having first films and second films that are alternately stacked, a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films, and a channel film extending in the stacked body in the stacking direction. The channel film includes a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor.

Semiconductor device with hybrid channel

A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.

Semiconductor device with change storage layer

According to one or more embodiments, a method for manufacturing a semiconductor device comprises forming a stacked film that comprises alternating first insulating layers and second insulating layers. A first insulating film, an electric charge storage layer, a second insulating film, and a first semiconductor layer are then formed in a hole in the stacked film. The method further includes forming a first recess in the stacked film, then supplying a first gas and a deuterium gas to the first recess. The first gas comprises hydrogen and oxygen.

Manufacturing method of semiconductor device

Semiconductor device

A semiconductor memory device includes a stacked structure and a memory pillar. The stacked structure includes electrode layers and insulating layers alternately provided on a substrate. The memory pillar extends through the stacked structure in a thickness direction. The memory pillar includes a semiconductor layer extending along the thickness direction, and a first insulating film, a charge storage layer, and a second insulating film provided around the semiconductor layer. The charge storage layer contains fluorine, and a fluorine concentration in the charge storage layer has a gradient along a plane direction of the substrate with a peak. A first distance from an inner end of the charge storage layer to the peak in the plane direction is shorter than a second distance from an outer end of the charge storage layer to the peak in the plane direction.

Semiconductor device and manufacturing method

According to one embodiment, a semiconductor device includes a semiconductor layer, a charge storage layer provided on the surface of the semiconductor layer via a first insulating film, and an electrode layer provided on the surface of the charge storage layer via a second insulating film. The first insulating film includes a first region where the compositional ratio of nitrogen to silicon, oxygen and nitrogen varies from a first value to a second value, which is lower than the first value, along a first direction from the semiconductor layer toward the charge storage layer.

In one embodiment, a method of manufacturing a semiconductor device includes alternately forming a plurality of first films and a plurality of second films on a substrate, and forming an opening in the first and second films. The method further includes sequentially forming a first insulator, a charge storage layer, a second insulator and a semiconductor layer on surfaces of the first and second films in the opening. The second insulator includes a silicon oxynitride film, and the silicon oxynitride film is formed using a first gas that includes silicon and a first element, a second gas that includes oxygen and nitrogen, and a third gas that includes a second element that reacts with the first element.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.

According to an embodiment, a semiconductor device includes: a stacked body in which insulator layers and conductor layers alternately stacked; a block insulator film on a surface of the insulator layer and a surface of the conductor layer; a charge storage capacitor film on a surface of the block insulator film; a tunnel insulator film including a first insulator film on a surface of the charge storage capacitor film, a second insulator film on a surface of the first insulator film, and a third insulator film on a surface of the second insulator film; and a channel film on a surface of the third insulator film. A defect termination element is included in at least the first or the third insulator film, and defect termination element content concentrations of the first, the second, and the third insulator film are different from one another.

Semiconductor device and manufacturing method thereof

In a manufacturing method of a semiconductor device according to an embodiment, an oxide film is formed on a semiconductor layer containing an impurity. A heat treatment is performed on the semiconductor layer to diffuse part of the impurity into the oxide film with hydrogen plasma treatment on the oxide film or with ultraviolet irradiation on the oxide film. After the heat treatment, the oxide film is removed.

Manufacturing method of a semiconductor device

In accordance with an embodiment, a substrate treatment apparatus includes a housing, a magnetic field generating portion and a microwave supply portion. The housing is configured to contain a substrate comprising a conductive layer and an insulating film in contact with the conductive layer. The magnetic field generating portion is configured to generate a magnetic field which penetrates the substrate. The microwave supply portion is configured to generate a microwave to heat the substrate, to apply the microwave to the substrate provided in the magnetic field in such a manner that the microwave is absorbed by unpaired electrons at an interface between the conductive layer and the insulating film or in the insulating film.

Growing community of inventors

Yokkaichi Mie, Japan

Tatsunori Isogai