The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Aug. 29, 2019
Toshiba Memory Corporation, Tokyo, JP;
Masaki Noguchi, Yokkaichi Mie, JP;
Tatsunori Isogai, Yokkaichi Mie, JP;
Tomonori Aoyama, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a semiconductor layer, a charge storage layer provided on the surface of the semiconductor layer via a first insulating film, and an electrode layer provided on the surface of the charge storage layer via a second insulating film. The first insulating film includes a first region where the compositional ratio of nitrogen to silicon, oxygen and nitrogen varies from a first value to a second value, which is lower than the first value, along a first direction from the semiconductor layer toward the charge storage layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile