The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Apr. 28, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/51 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 49/02 (2006.01); H01L 23/528 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7926 (2013.01); H01L 29/513 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H01L 23/528 (2013.01); H01L 28/60 (2013.01); H01L 29/40117 (2019.08); H01L 29/518 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.