The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Sep. 22, 2011
Ichiro Mizushima, Kanagawa, JP;
Shinji Mori, Kanagawa, JP;
Masahiko Murano, Kanagawa, JP;
Tsutomu Sato, Oita, JP;
Takashi Nakao, Kanagawa, JP;
Hiroshi Itokawa, Kanagawa, JP;
Ichiro Mizushima, Kanagawa, JP;
Shinji Mori, Kanagawa, JP;
Masahiko Murano, Kanagawa, JP;
Tsutomu Sato, Oita, JP;
Takashi Nakao, Kanagawa, JP;
Hiroshi Itokawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.