The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Mar. 02, 2018
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Hiroshi Itokawa, Kuwana Mie, JP;
Takashi Furuhashi, Kuwana Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor memory device includes a stacked body, a semiconductor portion, a first insulating film, a charge storage layer, and a second insulating film. The stacked body has a plurality of electrode layers stacked in a spaced apart manner from each other. The semiconductor portion is provided in the stacked body and extends in a first direction where the plurality of electrode layers are stacked. The first insulating film is provided between the plurality of electrode layers and the semiconductor portion. The charge storage layer is provided between the plurality of electrode layers and the first insulating film and contains a compound including at least one of hafnium oxide or zirconium oxide and a first material having a valence lower than that of the at least one of the hafnium oxide or the zirconium oxide.