The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Aug. 10, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Hiroki Okamoto, Nishinomiya, JP;
Hiroshi Itokawa, Oita, JP;
Masayuki Kitamura, Yokkaichi, JP;
Atsushi Yagishita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, the contact electrode extends in the inter-layer insulating layer toward the second semiconductor region. The metal silicide film is in contact with the second semiconductor region and the contact electrode. The metal silicide film includes a first part and a second part. The first part is provided between a bottom of the contact electrode and the second semiconductor region. The second part is provided on a surface of the second semiconductor region between the first part and the gate electrode. A bottom of the second part is located at a position shallower than a bottom the first part.