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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11183507 B1

PDFFull Text
Date of Patent:
Nov. 23, 2021

Filed:

Aug. 22, 2017

Semiconductor memory device and method for manufacturing same

Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Katsuyuki Sekine, Yokkaichi, JP;

Tatsuya Kato, Yokkaichi, JP;

Fumitaka Arai, Yokkaichi, JP;

Toshiyuki Iwamoto, Mie, JP;

Yuta Watanabe, Yokkaichi, JP;

Wataru Sakamoto, Yokkaichi, JP;

Hiroshi Itokawa, Oita, JP;

Akio Kaneko, Yokkaichi, JP;

Assignee:

Toshiba Memory Corporation, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Matthew C Landau

Assistant Examiner:

Eric K Ashbahian

Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 27/11519 (2017.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/02636 (2013.01); H01L 21/76801 (2013.01); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01); H01L 29/456 (2013.01); H01L 29/513 (2013.01); H01L 29/515 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/7883 (2013.01); H01L 21/0217 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02271 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 27/11519 (2013.01); H01L 29/1037 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/4975 (2013.01); H01L 29/517 (2013.01); H01L 29/7889 (2013.01);
Abstract

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, a second insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, and a conductive film provided between the second electrode and the second insulating film, the conductive film not contacting the first insulating film.

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