The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Sep. 16, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Hiroshi Itokawa, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/423 (2006.01); H01L 21/3115 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/788 (2006.01); H01L 29/49 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/28273 (2013.01); H01L 21/28506 (2013.01); H01L 21/3115 (2013.01); H01L 29/42332 (2013.01); H01L 29/4916 (2013.01); H01L 29/7883 (2013.01); H01L 21/28568 (2013.01); H01L 29/495 (2013.01);
Abstract

A semiconductor memory device according to one embodiment, includes an interconnect extending in a first direction, a semiconductor member extending in a second direction crossing the first direction, an electrode provided between the interconnect and the semiconductor member, a first insulating film provided between the interconnect and the electrode, a second insulating film provided between the first insulating film and the electrode, a third insulating film provided between the electrode and the semiconductor member, and a metal-containing layer provided between the first insulating film and the second insulating film or inside the first insulating film, and having a metal surface concentration of 1×10cmor more and 5×10cmor less.


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