The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Jan. 13, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Hiroshi Itokawa, Oita-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); H01L 29/788 (2013.01); H01L 21/28273 (2013.01);
Abstract
A semiconductor memory device according to an embodiment, includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a silicon film including silicon provided on the first insulating film, a second insulating film provided on the silicon film, a hafnium alloy-containing film provided on the second insulating film, the hafnium alloy-containing film including oxygen and an alloy of hafnium and a metal other than hafnium, a third insulating film provided on the hafnium alloy-containing film, and an electrode provided on the third insulating film.