The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Jan. 30, 2003
Haoren Zhuang, Tokyo-to, JP;
Ulrich Egger, Kanagawa-ken, JP;
Kazuhiro Tomioka, Kanagawa-ken, JP;
Jingyu Lian, Tokyo-to, JP;
Nicolas Nagel, Kanagawa-ken, JP;
Andreas Hilliger, Kanagawa-ken, JP;
Gerhard Beitel, Kanagawa-ken, JP;
Haoren Zhuang, Tokyo-to, JP;
Ulrich Egger, Kanagawa-ken, JP;
Kazuhiro Tomioka, Kanagawa-ken, JP;
Jingyu Lian, Tokyo-to, JP;
Nicolas Nagel, Kanagawa-ken, JP;
Andreas Hilliger, Kanagawa-ken, JP;
Gerhard Beitel, Kanagawa-ken, JP;
Infineon Technologies AG, , DE;
Kabushiki Kaisha Toshiba, , JP;
Abstract
The present invention provides a sidewall oxygen diffusion barrier and a method for fabricating the sidewall oxygen diffusion barrier that reduces the diffusion of oxygen into contact plugs during a CW hole reactive ion etch of a ferroelectric capacitor of an FeRAM device. In one embodiment the sidewall barrier is formed from a substrate fence. In another embodiment, the sidewall barrier is formed by etching back an oxygen barrier.