The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Oct. 01, 2003
Jingyu Lian, Wallkill, NY (US);
Nicolas Nagel, Kanagawa-ken, JP;
Stefan Gernhardt, Kanagawa-ken, JP;
Rainer Bruchhaus, Kanagawa-ken, JP;
Andreas Hilliger, Kanagawa-ken, JP;
Uwe Wellhausen, Dresden, DE;
Jingyu Lian, Wallkill, NY (US);
Nicolas Nagel, Kanagawa-ken, JP;
Stefan Gernhardt, Kanagawa-ken, JP;
Rainer Bruchhaus, Kanagawa-ken, JP;
Andreas Hilliger, Kanagawa-ken, JP;
Uwe Wellhausen, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An FeRAM comprising includes a ferroelectric material sandwiched between a top electrode and a bottom electrode. A V0-contact provides an electrical connection with an underlying CS-contact. The V0-contact is aligned using the bottom electrode. A liner layer covers a sidewall of the bottom electrode and provides a stop to an etch a hole forming the V0-contact. A method is utilized to form a V0-contact in an FeRAM comprising. An Fe capacitor of the FeRAM is encapsulated, a bottom electrode is etched, a liner layer is deposited covering a sidewall of the bottom electrode, and a hole is etched for the VO-contact until the etching is stopped by the liner layer.