The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Sep. 05, 2003
Bum-ki Moon, Tokyo-to, JP;
Karl Hornik, Kanagawa-ken, JP;
Haoren Zhuang, Tokyo-to, JP;
Ulrich Egger, Kanagawa-ken, JP;
Jenny Lian, Wallkill, NY (US);
Andreas Hilliger, Kanagawa-ken, JP;
Bum-Ki Moon, Tokyo-to, JP;
Karl Hornik, Kanagawa-ken, JP;
Haoren Zhuang, Tokyo-to, JP;
Ulrich Egger, Kanagawa-ken, JP;
Jenny Lian, Wallkill, NY (US);
Andreas Hilliger, Kanagawa-ken, JP;
Infineon Technologies AG, Munich, DE;
Abstract
A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.