The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Aug. 06, 2003
Haoren Zhuang, Tokyo, JP;
Ulrich Egger, Tokyo, JP;
Jingyu Lian, Tokyo, JP;
Stefan Gernhardt, Kanagawa-Ken, JP;
Hiroyuki Kanaya, Kanagawa-Ken, JP;
Haoren Zhuang, Tokyo, JP;
Ulrich Egger, Tokyo, JP;
Jingyu Lian, Tokyo, JP;
Stefan Gernhardt, Kanagawa-Ken, JP;
Hiroyuki Kanaya, Kanagawa-Ken, JP;
Infineon Technologies AG, , DE;
Kabushiki Kaisha Toshiba, , JP;
Abstract
A ferroelectric device includes a bottom electrode on which are formed ferrocapacitor elements and, over the ferroelectric elements, top electrodes. The bottom electrodes are connected to lower layers of the device via conductive plugs, and the plugs and bottom electrodes are spaced apart by barrier elements of Ir and/or IrO. The barrier elements are narrower than the bottom electrode elements, and are formed by a separate etching process. This means that Ir fences are not formed during the etching of the bottom electrode. Also, little Ir and/or IrOdiffuses through the bottom electrode to the ferroelectric elements, and therefore there is little risk of damage to the ferroelectric material.