The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Apr. 18, 2005
Osamu Arisumi, Yokohama, JP;
Yoshinori Kumura, Yokohama, JP;
Kazuhiro Tomioka, Tsukuba, JP;
Ulrich Egger, Dresden, DE;
Haoran Zhuang, Wallkill, NY (US);
Bum-ki Moon, Poughkeepsie, NY (US);
Osamu Arisumi, Yokohama, JP;
Yoshinori Kumura, Yokohama, JP;
Kazuhiro Tomioka, Tsukuba, JP;
Ulrich Egger, Dresden, DE;
Haoran Zhuang, Wallkill, NY (US);
Bum-ki Moon, Poughkeepsie, NY (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABOperovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a sidewall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or less.