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For the Inventor, By the Inventor

Tokyo, Japan

Takehiko Nomura

This inventor holds 29 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: The Furukawa Electric Co., Ltd., Fuji Electric Co., Ltd., Tohoku University. Active years: 1999-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takehiko Nomura. Retrieved from https://idiyas.com/inventor/takehiko-nomura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 93.1


Average Co-Inventor Count = 3.5

ph-index = 6

Forward Citations = 96(Granted Patents)


Location History:

  • Toyko, JP (2004)
  • Chiyoda-ku, JP (2003 - 2005)
  • Kanagawa, JP (1999 - 2012)
  • Tokyo, JP (2004 - 2015)
  • Yokohama, JP (2018)

Company Filing History:

goldMedal28 out of 2,643 
 
The Furukawa Electric Co., Ltd.
 patents
silverMedal1 out of 4,826 
 
Fuji Electric Co., Ltd.
 patents
bronzeMedal1 out of 1,051 
 
Tohoku University
 patents
where one patent can have more than one assignee

Years Active: 1999-2018

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Areas of Expertise:
Semiconductor Transistor
Field Effect Transistor
GaN-based Device
Optical Module
Wavelength Control
Optical Filter
Silicon Platform
Laser Module
Optical Transmission
WDM Device
Optical Fiber Module
Inclined Side Wall
29 patents (USPTO):Explore Patents
1. 9875899 - Semiconductor transistor (2018-01-23),
2. 9048302 - Field effect transistor having semiconductor operating layer formed with an inclined side wall (2015-06-02),
3. 8450782 - Field effect transistor, method of manufacturing field effect transistor, and method of forming groove (2013-05-28),
4. 8441105 - Semiconductor device, wafer structure and method for fabricating semiconductor device (2013-05-14),
5. 8421182 - Field effect transistor having MOS structure made of nitride compound semiconductor (2013-04-16),
6. 8350293 - Field effect transistor and method of manufacturing the same (2013-01-08),
7. 8309988 - Field effect transistor (2012-11-13),
8. 8304809 - GaN-based semiconductor device and method of manufacturing the same (2012-11-06),
9. 8283700 - Field effect transistor and manufacturing method thereof (2012-10-09),
10. 8093626 - Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor (2012-01-10),
11. 8072002 - Field effect transistor (2011-12-06),
12. 7998848 - Method of producing field effect transistor (2011-08-16),
13. 7943496 - Method of manufacturing GaN-based transistors (2011-05-17),
14. 7855155 - Process for producing semiconductor device using optical absorption layer (2010-12-21),
15. 7821035 - ED inverter circuit and integrate circuit element including the same (2010-10-26),

Title: Takehiko Nomura: Innovating Semiconductor Technologies in Tokyo

Introduction

Takehiko Nomura, a prominent inventor based in Tokyo, Japan, holds an impressive portfolio of 29 patents. His innovative contributions, particularly in the field of semiconductor technology, have positioned him as a notable figure within the industry.

Latest Patents

Among his latest patents, Nomura focuses on groundbreaking advancements in semiconductor transistors. One of his key inventions describes a semiconductor transistor comprising an active layer made of a GaN-based semiconductor, with a gate insulating film layered on top. This film features a primary insulating layer composed of compounds such as AlO, HfO, ZrO, LaO, and YO, topped with a secondary insulating layer made of SiO.

Another significant patent he holds is for a field effect transistor which employs a nitride-based compound semiconductor. This invention details a transistor with an MOS structure, consisting of a substrate and an operating layer that includes a specialized recess, along with an insulating layer and strategically placed gates and electrodes, enhancing its operational capabilities.

Career Highlights

Throughout his career, Takehiko Nomura has been associated with renowned companies, including Furukawa Electric Co., Ltd. and Fuji Electric Co., Ltd. His work in these organizations has allowed him to refine his expertise and contribute significantly to advancements in semiconductor technologies.

Collaborations

Nomura has had the privilege of collaborating with esteemed professionals, such as Seikoh Yoshida and Hiroshi Kambayashi. These collaborations have facilitated the exchange of ideas and innovations, further enhancing the technological landscape in which he operates.

Conclusion

Takehiko Nomura's contributions to semiconductor technology exemplify his dedication and inventive spirit. With his extensive patent portfolio and notable career achievements, he continues to pave the way for future innovations in the field. His work not only advances technology but also inspires future inventors in the quest for cutting-edge solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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