The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Mar. 02, 2011
Hiroshi Kambayashi, Yokohama, JP;
Katsunori Ueno, Yokohama, JP;
Takehiko Nomura, Yokohama, JP;
Yoshihiro Sato, Yokohama, JP;
Akinobu Teramoto, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Hiroshi Kambayashi, Yokohama, JP;
Katsunori Ueno, Yokohama, JP;
Takehiko Nomura, Yokohama, JP;
Yoshihiro Sato, Yokohama, JP;
Akinobu Teramoto, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Abstract
The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of AlO, HfO, ZrO, LaO, and YOformed on the active layer, and a second insulating film composed of SiOformed on the first insulating film.