The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Nov. 13, 2008
Shusuke Kaya, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masatoshi Ikeda, Legal Representative, Tokyo, JP;
Sadahiro Kato, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Nariaki Ikeda, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Yoshihiro Sato, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Koh LI, Tokyo, JP;
Shusuke Kaya, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masatoshi Ikeda, legal representative, Tokyo, JP;
Sadahiro Kato, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Nariaki Ikeda, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Yoshihiro Sato, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Koh Li, Tokyo, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
In a GaN-based semiconductor device, an active layer of a GaN-based semiconductor is formed on a silicon substrate. A trench is formed in the active layer and extends from a top surface of the active layer to a depth reaching the silicon substrate. A first electrode is formed on an internal wall surface of the trench and extends from the top surface of the active layer to the silicon substrate. A second electrode is formed on the active layer to define a current path between the first electrode and the second electrode via the active layer in an on-state of the device. A bottom electrode is formed on a bottom surface of the silicon substrate and defines a bonding pad for the first electrode. The first electrode is formed of metal in direct ohmic contact with both the silicon substrate and the active layer.