Company Filing History:
Years Active: 2010-2012
Title: Masatoshi Ikeda - Innovator in GaN-based Semiconductor Technology
Introduction
Masatoshi Ikeda is a prominent inventor and legal representative based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of GaN-based devices. With a total of 5 patents to his name, Ikeda continues to push the boundaries of innovation in this critical area of electronics.
Latest Patents
Ikeda's latest patents include groundbreaking work on GaN-based semiconductor devices and methods of manufacturing them. One notable patent describes a GaN-based semiconductor device where an active layer of GaN is formed on a silicon substrate. This design features a trench that extends from the top surface of the active layer to the silicon substrate, allowing for efficient electrical conduction. The device includes a first electrode formed on the trench's internal wall, a second electrode on the active layer, and a bottom electrode on the silicon substrate, ensuring optimal performance. Another patent focuses on a GaN-based semiconductor element that incorporates a substrate, a buffer layer with an electrically conductive portion, and an epitaxial layer, all designed to control the electric potential effectively.
Career Highlights
Ikeda has built a successful career at The Furukawa Electric Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His expertise and innovative approach have positioned him as a key figure in the industry, contributing to the company's reputation for excellence in electrical and electronic components.
Collaborations
Ikeda has collaborated with notable colleagues such as Seikoh Yoshida and Takehiko Nomura. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
Masatoshi Ikeda's work in GaN-based semiconductor technology exemplifies the spirit of innovation that drives the electronics industry forward. His contributions not only enhance the performance of semiconductor devices but also pave the way for future advancements in technology.