The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Mar. 26, 2009
Yuki Niiyama, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masatoshi Ikeda, Legal Representative, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masatoshi Ikeda, legal representative, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability.