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For the Inventor, By the Inventor

Tokyo, Japan

Seikoh Yoshida

This inventor holds 29 USPTO granted patents and 1 published patent application, primarily in GaN Semiconductor Technology. Top assignees: The Furukawa Electric Co., Ltd., Other. Active years: 1989-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seikoh Yoshida. Retrieved from https://idiyas.com/inventor/seikoh-yoshida

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 29 

% Patents Active = 93.1

Average Co-Inventor Count = 2.1

ph-index = 9

Forward Citations = 272(Granted Patents)


Location History:

  • Yokohama, JP (1989)
  • Toride, JP (1995 - 2001)
  • Chiyoda-ku, JP (2006 - 2008)
  • Tokyo, JP (1994 - 2015)

Company Filing History:

goldMedal28 out of 2,643 
 
The Furukawa Electric Co., Ltd.
 patents
silverMedal2 out of 834,659 
Other
 patents
where one patent can have more than one assignee

Years Active: 1989-2015

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Areas of Expertise:
Field Effect Transistor
GaN Semiconductor
Nitride Compound
High Electron Mobility
Normally-Off Type
Optical Absorption Layer
Single Crystal Growth
III-V Nitride
Buffer Layer Structure
Power Conversion
Integrated Circuit
Manufacturing Method
29 patents (USPTO):Explore Patents
1. 9048302 - Field effect transistor having semiconductor operating layer formed with an inclined side wall (2015-06-02),
2. 8729603 - GaN-based semiconductor element (2014-05-20),
3. 8525225 - Semiconductor device (2013-09-03),
4. 8421182 - Field effect transistor having MOS structure made of nitride compound semiconductor (2013-04-16),
5. 8350293 - Field effect transistor and method of manufacturing the same (2013-01-08),
6. 8304809 - GaN-based semiconductor device and method of manufacturing the same (2012-11-06),
7. 8183597 - GaN semiconductor device having a high withstand voltage (2012-05-22),
8. 8178898 - GaN-based semiconductor element (2012-05-15),
9. 8134181 - Semiconductor device (2012-03-13),
10. 8093626 - Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor (2012-01-10),
11. 8072002 - Field effect transistor (2011-12-06),
12. 7998848 - Method of producing field effect transistor (2011-08-16),
13. 7855155 - Process for producing semiconductor device using optical absorption layer (2010-12-21),
14. 7821035 - ED inverter circuit and integrate circuit element including the same (2010-10-26),
15. 7812371 - GaN based semiconductor element (2010-10-12),

Title: Seikoh Yoshida: Pioneering Inventor from Tokyo

Introduction: Seikoh Yoshida is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Seikoh Yoshida holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over three decades, Seikoh Yoshida has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Seikoh Yoshida has collaborated with top researchers, engineers, and scientists both in Japan and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Seikoh Yoshida's relentless pursuit of innovation and his passion for creating technology that improves lives have solidified his position as a pioneering inventor in Tokyo and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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