The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Apr. 12, 2012
Applicants:
Nariaki Ikeda, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Inventors:
Nariaki Ikeda, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Assignee:
Furukawa Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A GaN-based semiconductor element includes a substrate, a buffer layer formed on the substrate, including an electrically conductive portion, an epitaxial layer formed on the buffer layer, and a metal structure in ohmic contact with the electrically conductive portion of the buffer layer for controlling an electric potential of the buffer layer.