The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Dec. 29, 2009
Tat-sing Paul Chow, Troy, NY (US);
Takehiko Nomura, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Tat-Sing Paul Chow, Troy, NY (US);
Takehiko Nomura, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A p-type nitride compound semiconductor layer is formed on a buffer formed on a substrate. An n-type contact region is formed by ion implantation under a source electrode and a drain electrode. An electric-field reducing layer made of an n-type nitride compound semiconductor is formed on the p-type nitride compound semiconductor layer. A carrier density of the electric-field reducing layer is lower than that of the n-type contact region. A first end portion of the electric-field reducing layer contacts with the n-type contact region, and a second end portion of the electric-field reducing layer overlaps with a gate electrode.