The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jan. 08, 2009
Yoshihiro Sato, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Jiang LI, Tokyo, JP;
Yoshihiro Sato, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Jiang Li, Tokyo, JP;
THE FURUKAWA ELECTRIC CO., LTD, Tokyo, JP;
Abstract
A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.