Tokyo, Japan

Jiang Li

This inventor holds 10 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignees: The Furukawa Electric Co., Ltd., Tokyo Institute of Technology, Tsubame Bhb Co., Ltd.. Active years: 2012-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiang Li. Retrieved from https://idiyas.com/inventor/jiang-li-1ahar0n0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 90.0

 

Average Co-Inventor Count = 5.1

ph-index = 4

Forward Citations = 62(Granted Patents)


Location History:

  • Kanagawa, JP (2015)
  • Tokyo, JP (2012 - 2018)
  • Megro-ku, JP (2020)
  • Meguro-ku, JP (2022 - 2024)

Company Filing History:


Years Active: 2012-2025

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10 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Jiang Li in Semiconductor Technology

Introduction

Jiang Li, a notable inventor based in Tokyo, Japan, has made significant strides in the field of semiconductor technology. With a portfolio that boasts six patents, Li's innovations are paving the way for advancements in nitride semiconductor devices.

Latest Patents

Among his latest patents, Jiang Li has developed a nitride semiconductor device, which encompasses a production method for diodes and field-effect transistors. This invention features a semiconductor stack composed of multiple layers of nitride semiconductors built on a base with a conductive portion. The device includes a first electrode and a second electrode applied to separate portions of the semiconductor layers. These electrodes are connected to upper-layer wirings, establishing a low permittivity area that enhances the device's performance.

His other recent patent, which focuses on semiconductor multi-layer substrates and elements, highlights a complex structure including a substrate, a buffer layer, and an electric-field control layer. This innovative design ensures that the resistance in the substrate’s lateral direction is optimized, allowing for better control of electric fields within the device.

Career Highlights

Jiang Li has garnered extensive experience in his field by working with esteemed companies such as Furukawa Electric Co., Ltd. and Fuji Electric Co., Ltd. His career reflects his commitment to enhancing semiconductor technology through innovative design and application, contributing not only to his patents but to the overall advancement of the industry.

Collaborations

Throughout his professional journey, Jiang has collaborated with talented individuals, including Keishi Takaki and Ryosuke Tamura. These collaborations have likely played a crucial role in driving his innovative ideas from conception to realization, further showcasing the importance of teamwork in the research and development domain.

Conclusion

Jiang Li's contributions to the semiconductor industry through his patents and collaborative efforts exemplify the essence of innovation. As technology continues to evolve, Li's work is set to leave a lasting impact on the future of semiconductor devices. His dedication to enhancing the functionality and efficiency of these technologies positions him as a leading inventor in his field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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