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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9911842 B1

PDFFull Text
Date of Patent:
Mar. 06, 2018

Filed:

Apr. 13, 2016

Nitride semiconductor device, production method thereof, diode, and field effect transistor

Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventors:

Kazuyuki Umeno, Tokyo, JP;

Shinya Otomo, Tokyo, JP;

Keishi Takaki, Tokyo, JP;

Jiang Li, Tokyo, JP;

Takuya Kokawa, Tokyo, JP;

Ryosuke Tamura, Tokyo, JP;

Masayuki Iwami, Tokyo, JP;

Shusuke Kaya, Tokyo, JP;

Hirotatsu Ishii, Tokyo, JP;

Assignee:

FURUKAWA ELECTRIC CO., LTD., Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Jarrett Stark

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/812 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/1075 (2013.01); H01L 29/152 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/404 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/513 (2013.01); H01L 29/812 (2013.01);
Abstract

A nitride semiconductor device includes; a semiconductor stack configured with a plurality of semiconductor layers made of nitride semiconductors provided on a base having a conductive portion; a first electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack; a second electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack separately from the first electrode; a first wiring provided at an upper layer of the first electrode; and a second wiring provided at an upper layer of the second electrode. A low permittivity area being a portion of which permittivity is lower than permittivities of the nitride semiconductors configuring the semiconductor stack at a lower layer of a portion of at least one of the first electrode and the second electrode other than a portion being junctioned with the semiconductor stack electrically.

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