The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Jun. 14, 2007
Yuki Niiyama, Tokyo, JP;
Shinya Ootomo, Tokyo, JP;
Tatsuyuki Shinagawa, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Shinya Ootomo, Tokyo, JP;
Tatsuyuki Shinagawa, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.