Shinya Ootomo

Title: Shinya Ootomo: Innovator in Semiconductor Technology

Introduction

Shinya Ootomo is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advancements in semiconductor devices and manufacturing methods.

Latest Patents

Ootomo's latest patents include a semiconductor multi-layer substrate and a normally-off field effect transistor using a III-nitride semiconductor. The semiconductor multi-layer substrate features a substrate made of silicon and a multi-layer semiconductor layer that includes an active layer made of a nitride semiconductor. This innovative design incorporates a first warp control layer that imparts a predetermined warp to the substrate and a second warp control layer that has a smaller increase in warp per unit thickness compared to the first layer. The total thickness of the multi-layer semiconductor layer is equal to or greater than 4 micrometers. Additionally, his normally-off field effect transistor utilizes a III-nitride semiconductor layer grown on a substrate, which includes both an acceptor and a donor. This transistor design includes a gate insulating film and strategically placed source/drain electrodes to enhance performance.

Career Highlights

Throughout his career, Ootomo has worked with notable companies such as Furukawa Electric Co., Ltd. and Fuji Electric Co., Ltd. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technologies.

Collaborations

Ootomo has collaborated with esteemed colleagues, including Seikoh Yoshida and Hiroshi Kambayashi. Their combined efforts have contributed to advancements in the semiconductor field.

Conclusion

Shinya Ootomo's innovative work in semiconductor technology has led to significant advancements and patents that continue to influence the industry. His contributions reflect a commitment to excellence and innovation in the field.