The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Nov. 08, 2007
Yoshihiro Sato, Tokyo, JP;
Sadahiro Kato, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Hitoshi Sasaki, Tokyo, JP;
Shinya Ootomo, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Yoshihiro Sato, Tokyo, JP;
Sadahiro Kato, Tokyo, JP;
Masayuki Iwami, Tokyo, JP;
Hitoshi Sasaki, Tokyo, JP;
Shinya Ootomo, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.