The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Dec. 01, 2008
Takehiko Nomura, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
Takehiko Nomura, Tokyo, JP;
Hiroshi Kambayashi, Tokyo, JP;
Yuki Niiyama, Tokyo, JP;
Seikoh Yoshida, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A second semiconductor layer of a second nitride-based compound semiconductor with a wider bandgap formed on a first semiconductor layer of a first nitride-based compound semiconductor with a smaller bandgap includes an opening, on which a gate insulating layer is formed at a portion exposed through the opening. A first source electrode and a first drain electrode formed across a first gate electrode make an ohmic contact to the second semiconductor layer. A second source electrode and a second drain electrode formed across a second gate electrode that makes a Schottky contact to the second semiconductor layer make an ohmic contact to the second semiconductor layer.